| PART |
Description |
Maker |
| STD5N80K5 |
N-channel 800 V, 1.50 (ohm) typ., 4 A MDmesh K5 Power MOSFET in a DPAK package
|
STMicroelectronics
|
| STB13N80K5 |
N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in D2PAK package
|
ST Microelectronics
|
| STL8N80K5 |
N-channel 800 V, 0.80 typ., 4.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT
N-channel 800 V, 0.80 typ., 4.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT
|
STMicroelectronics
|
| SKDH146-L100 SKDH146_12-L100 SKDH146_16-L100 SKDH1 |
MOSFET; ID (A): 0.03; VDS (V): 6; Pch : 0.25; |yfs| (S) typ: 29/29; PG (dB) typ: 30/30; Ciss (pF) typ: 2.1/2.1; NF (dB) typ: 1.1/1.1; IDSS (mA): Package: CMPAK-6
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| STH300NH02L-6 |
N-channel 24 V, 0.95 mOhm typ., 180 A STripFET(TM) Power MOSFET in a H2PAK-6 package
Automotive-grade N-channel 24 V, 0.95 typ., 180 A
|
ST Microelectronics
STMicroelectronics
|
| IRFD9014 |
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-1.1A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 1.1A的）
-60V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
|
International Rectifier, Corp.
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| STW57N65M5 STI57N65M5 STP57N65M5 STB57N65M5 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in D2PAK package
N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET
N-channel 650 V, 0.056 Ω typ., 42 A MDmesh V Power MOSFET in I2PAK, TO-220, TO-220FP and D2PAK packages
|
ST Microelectronics
STMicroelectronics
|
| CA2830C CA2830 |
RF/Coaxial Connector; RF Coax Type:N; Contact Termination:Crimp or Solder; Impedance:50ohm; Body Style:Straight Plug; RG Cable Type:9, 9A, 9B, 214
34.5 dB 5-200 MHz 800 mWATT WIDEBAND LINEAR AMPLIFIERS
|
Motorola, Inc.
|
| IRFD320 FN2325 |
500 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
0.5A 400V 1.800 Ohm N-Channel Power MOSFET
0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
From old datasheet system
0.5A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| STP9N65M2 STD9N65M2 STF9N65M2 |
Extremely low gate charge
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220FP package
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK package
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220 package
|
STMicroelectronics
ST Microelectronics
|
